Current crowding in InAsSb light-emitting diodes
Identifieur interne : 000858 ( Russie/Analysis ); précédent : 000857; suivant : 000859Current crowding in InAsSb light-emitting diodes
Auteurs : RBID : Pascal:02-0019374Descripteurs français
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Abstract
High-resolution two-dimensional infrared (IR) imaging of dynamic electronic processes in the surface-emitting p-InAsSb/n-InAsSbP light-emitting diodes (LEDs) (λ=4.3μm, T>300K) showed that forward current crowding drastically decreases efficiency of LEDs with point contacts. Current flows and IR emittance forget the emitting area size and geometry, whereas extended areas far off the point contacts become even darker with the current increase. Contrary to this, the reverse bias causes remarkable current spreading and uniform negative emittance distribution. Therefore the negative luminescence mode is more favorable for IR LEDs operating at higher temperatures. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Current crowding in InAsSb light-emitting diodes</title><author><name sortKey="Malyutenko, V K" uniqKey="Malyutenko V">V. K. Malyutenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Kiev, 03028, Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Institute of Semiconductor Physics, Kiev, 03028</wicri:regionArea><wicri:noRegion>03028</wicri:noRegion></affiliation></author><author><name sortKey="Malyutenko, O Yu" uniqKey="Malyutenko O">O. Yu. Malyutenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Kiev, 03028, Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Institute of Semiconductor Physics, Kiev, 03028</wicri:regionArea><wicri:noRegion>03028</wicri:noRegion></affiliation></author><author><name sortKey="Podoltsev, A D" uniqKey="Podoltsev A">A. D. Podoltsev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Kiev, 03028, Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Institute of Semiconductor Physics, Kiev, 03028</wicri:regionArea><wicri:noRegion>03028</wicri:noRegion></affiliation></author><author><name sortKey="Kucheryavaya, I N" uniqKey="Kucheryavaya I">I. N. Kucheryavaya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Kiev, 03028, Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Institute of Semiconductor Physics, Kiev, 03028</wicri:regionArea><wicri:noRegion>03028</wicri:noRegion></affiliation></author><author><name sortKey="Matveev, B A" uniqKey="Matveev B">B. A. Matveev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Remennyi, M A" uniqKey="Remennyi M">M. A. Remennyi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Stus, N M" uniqKey="Stus N">N. M. Stus</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0019374</idno><date when="2001-12-17">2001-12-17</date><idno type="stanalyst">PASCAL 02-0019374 AIP</idno><idno type="RBID">Pascal:02-0019374</idno><idno type="wicri:Area/Main/Corpus">010222</idno><idno type="wicri:Area/Main/Repository">00FB04</idno><idno type="wicri:Area/Russie/Extraction">000858</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computerized simulation</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared imaging</term><term>Light emitting diodes</term><term>Point contacts</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>Etude expérimentale</term><term>Simulation ordinateur</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Diode électroluminescente</term><term>Imagerie IR</term><term>Contact ponctuel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High-resolution two-dimensional infrared (IR) imaging of dynamic electronic processes in the surface-emitting p-InAsSb/n-InAsSbP light-emitting diodes (LEDs) (λ=4.3μm, T>300K) showed that forward current crowding drastically decreases efficiency of LEDs with point contacts. Current flows and IR emittance forget the emitting area size and geometry, whereas extended areas far off the point contacts become even darker with the current increase. Contrary to this, the reverse bias causes remarkable current spreading and uniform negative emittance distribution. Therefore the negative luminescence mode is more favorable for IR LEDs operating at higher temperatures. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>25</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Current crowding in InAsSb light-emitting diodes</s1></fA08><fA11 i1="01" i2="1"><s1>MALYUTENKO (V. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>MALYUTENKO (O. Yu.)</s1></fA11><fA11 i1="03" i2="1"><s1>PODOLTSEV (A. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>KUCHERYAVAYA (I. N.)</s1></fA11><fA11 i1="05" i2="1"><s1>MATVEEV (B. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>REMENNYI (M. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>STUS (N. M.)</s1></fA11><fA14 i1="01"><s1>Institute of Semiconductor Physics, Kiev, 03028, Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>4228-4230</s1></fA20><fA21><s1>2001-12-17</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0019374</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>High-resolution two-dimensional infrared (IR) imaging of dynamic electronic processes in the surface-emitting p-InAsSb/n-InAsSbP light-emitting diodes (LEDs) (λ=4.3μm, T>300K) showed that forward current crowding drastically decreases efficiency of LEDs with point contacts. Current flows and IR emittance forget the emitting area size and geometry, whereas extended areas far off the point contacts become even darker with the current increase. Contrary to this, the reverse bias causes remarkable current spreading and uniform negative emittance distribution. Therefore the negative luminescence mode is more favorable for IR LEDs operating at higher temperatures. © 2001 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Simulation ordinateur</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Computerized simulation</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Diode électroluminescente</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Light emitting diodes</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Imagerie IR</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Infrared imaging</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Contact ponctuel</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Point contacts</s0></fC03><fN21><s1>001</s1></fN21><fN47 i1="01" i2="1"><s0>0151M000094</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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